GNRFET with superlattice source, channel, and drain: SLSCD-GNRFET

Abstract

We are proposing a next-generation graphene nanoribbon field-effect transistor (GNRFET) with superlattice source, channel, and drain (SLSCD-GNRFET), with significantly improved switching performance. The presence of superlattice in each region is for energy filtering. The simulation results indicate that the addition of an appropriate superlattice in the channel region, it reduces the subthreshold swing. Also, using proper superlattice in the drain region leads to an increase of more than a decade in the ION/IOFF ratio by intensely reducing the OFF-current. These improvements make the proposed transistor potentially suitable for the next-generation logical digital applications. Comparison of the simulation results for the proposed SLSCD-GNRFET with those of the conventional GNRFET, its tunneling counterpart (GNRTFET), and the one with superlattice source (SLS-GNRFET) show that the device OFF-current and subthreshold swing have improved significantly.