Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

Abstract

In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon (GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between intrinsic channel region and highly doped source and drain regions. By using a nonequilibrium Green’s function (NEGF) method, the transport characteristics of LDDS-GNRFET in comparison to those of conventional GNRFET are investigated. According to simulation results, LDDS-GNRFET with proper doping in LDDS regions, demonstrates much less leakage current, larger ON–OFF ratio (Ion/Ioff), better subthreshold-swing (SS), no ambipolar characteristic, and better switching parameters. These advantages represent the proposed structure as a suitable candidate for low-power and high-speed applications.