Abstract
An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ∼1 μs. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
