Abstract
High-quality single crystalline germanium lead (GePb) alloys were successfully grown on Si3N4 layer using Si seed by rapid melting growth. The strip composition distribution was studied by Raman spectroscopy and energy dispersive X-ray spectroscopy; the highest Pb content in the GePb strip was 2%. Cross-sectional transmission electron microscopy and selected-area electron diffraction analyses indicated that the GePb strip had a high crystal quality with no dislocations or stacking faults. The GePb strip photodetectors were fabricated and showed good optical properties, with underestimated responsivities of 107, 71, and 20 mA/W at 1310, 1550, and 1630 nm, respectively. Therefore, the rapid melting growth is an effective method for obtaining high Pb content GePb alloys. In addition, GePb devices show high potential for photodetection.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call