Generation of uniform large-area very high frequency plasmas by launching two specific standing waves simultaneously

Abstract

With the characteristics of higher electron density and lower ion bombardment energy, large-area VHF (very high frequency) plasma enhanced chemical vapor deposition has become an essential manufacturing equipment to improve the production throughput and efficiency of thin film silicon solar cell. However, the combination of high frequency and large electrodes leads to the so-called standing wave effect causing a serious problem for the deposition uniformity of silicon thin film. In order to address this issue, a technique based on the idea of simultaneously launching two standing waves that possess similar amplitudes and are out of phase by 90° in time and space is proposed in this study. A linear plasma reactor with discharge length of 54 cm is tested with two different frequencies including 60 and 80 MHz. The experimental results show that the proposed technique could effectively improve the non-uniformity of VHF plasmas from >±60% when only one standing wave is applied to <±10% once two specific standing waves are launched at the same time. Moreover, in terms of the reactor configuration adopted in this study, in which the standing wave effect along the much shorter dimension can be ignored, the proposed technique is applicable to different frequencies without the need to alter the number and arrangement of power feeding points.