Abstract
Time-resolved cavity ringdown (τ-CRD) spectroscopy has been applied to measure the SiH3 radical density profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under µc-Si:H deposition conditions. On time scales smaller than ∼1 s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than ∼1 s, an additional cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is observed. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is determined, which reveals a significant contribution of SiH3 radicals to µc-Si:H thin film growth.
Published Version
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