Abstract
Coherent terahertz radiation has been generated in p–n heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterostructures. The properties of the generated terahertz radiation strongly depend on the bias voltage, which reflects the dynamics of nonequilibrium charge carriers produced by femtosecond laser pump in the heterostructure.
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