Abstract
We report results of investigations of process of generation of coherent terahertz (THz) radiation from 29 nm thick GaAs/Al0.37Ga0.63As quantum wells with transverse electric bias under interband femtoseconds laser photoexcitation at room temperature. The properties of the detected THz radiation allow us to attribute it to the excitation of time-varying dipole moment induced by electric field polarization of nonequilibrium electron–hole pairs in quantum wells. Noticeable sub-linearity in the dependence of THz amplitude on excitation density is observed. A theoretical model, which accounts for the dynamic screening of the electric field in wide GaAs quantum wells by nonequilibrium carriers, has been developed. The model describes well the properties of the observed THz signal.
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