Generalised thermionic-emission theory of carrier transport through thin base of bipolar transistor

Abstract

Carrier transport through the very thin, inhomogeniusly doped base of a bipolar transistor is analysed. Use is made of the analogy between the Schottky diode and thin base transistor model to find the current/voltage characteristic. So the advanced, generalised thermionic-emission theory of Schottky barrier, taking into account quantum-mechanical effects, is easily adopted for transistor model. The results show there is a considerable level (about 10%) of tunnelling component in the total collector current of contemporary microwave transistors.