Abstract
In this paper, we consider the synthesis of a compact (SPICE) Schottky diode model on GaN. Synthesis of a compact (SPICE) Schottky diode model is implemented on the basis of a modified model of a conventional diode on a p-n junction by extracting the parameters contained in it from experimental data. To create the structures of the Schottky diodes, epitaxial structures of gallium nitride grown by the MOCVD method on a sapphire substrate were used. Ohmic contacts of diode structures were formed on ion-doped epitaxial layers. The result of the simulation of diode structures is the extraction from experimental data of parameters of the compact model of a Schottky diode on GaN.
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