Abstract

In this paper, we consider the synthesis of a compact (SPICE) Schottky diode model on GaN. Synthesis of a compact (SPICE) Schottky diode model is implemented on the basis of a modified model of a conventional diode on a p-n junction by extracting the parameters contained in it from experimental data. To create the structures of the Schottky diodes, epitaxial structures of gallium nitride grown by the MOCVD method on a sapphire substrate were used. Ohmic contacts of diode structures were formed on ion-doped epitaxial layers. The result of the simulation of diode structures is the extraction from experimental data of parameters of the compact model of a Schottky diode on GaN.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.