Abstract
GaAs p-n junctions were grown by liquid-phase epitaxy using Ge as the acceptor and Sn as the donor. Abrupt junctions with well-controlled carrier concentrations in both the n and the p layers were produced. High-quality varactors and double-drift GaAs IMPATT diodes were fabricated. cw output power of 3.0 W with 15.8% efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7% efficiency at 10.56 GHz were observed.
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