Shifting of the peak generation rate in double-drift silicon IMPATT diodes

Abstract

In double-drift (DD) silicon IMPATT diodes, it is observed that the peak generation rates of both carriers (electrons and holes) lie within the n side. The shifting is due to the unequal ionization rates for electrons and holes in silicon. By neglecting the reverse saturation current, a simple analytical expression for the location where the peak generation occurs is derived. This simple result may be useful for the design of double-drift as well as complementary single-drift IMPATT diodes.