Abstract
A large-format, high-resolution Hg<sub>1–<i>x</i></sub>Cd<sub><i>x</i></sub>Te infrared focal plane array (IRFPA) image sensor can be used in aerospace remote sensing and high-precision satellite imaging. The next generation of meteorological satellites in China will all adopt this type of image sensor. However, space high-energy protons can cause displacement damage effects in Hg<sub>1–<i>x</i></sub>Cd<sub><i>x</i></sub>Te IRFPA detectors and induce total ionizing dose (TID) effects in the pixel unit metal-oxide-semiconductor (MOS) transistors. This study focuses on a 55nm manufacturing process Hg<sub>1–<i>x</i></sub>Cd<sub><i>x</i></sub>Te IRFPA sensor widely used in image sensors by using a 2 pixel×2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model. Simulations are conducted for different proton irradiation fluences, including 10<sup>10</sup>, 10<sup>11</sup>, 10<sup>12</sup> and 10<sup>13</sup> cm<sup>–2</sup>. The results show the displacement damage under various fluences, including non-ionizing energy loss and displacement atom distribution. It is found that at a proton cumulative fluence of 10<sup>13</sup> cm<sup>–2</sup>, in addition to considering the displacement damage effect in the Hg<sub>1–<i>x</i></sub>Cd<sub><i>x</i></sub>Te IRFPA sensor, attention must also be paid to the TID effects on the MOS transistors in the pixel units. Additionally, this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results. This study provides crucial data for supporting the space applications of future large-format Hg<sub>1–<i>x</i></sub>Cd<sub><i>x</i></sub>Te IRFPA image sensors.
Published Version
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