Abstract
Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski–Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.
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