Ge-Dot Formation on Si(111)-7 ×7 Surface with C Predeposition Using Monomethylsilane

Abstract

The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 ×7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.