Ge Dot Array Formation Using Small Convex Position Anchors

Abstract

On the basis of our recent results of long Ge migration on Si(001) and the Ge dot formation behavior with which Ge dots form at more stable points such as convex structures at higher growth temperatures on patterned Si(001), we propose a formation method for an artificially sized and positioned Ge dot array, with which Ge migrates and Ge dots form at anchor positions, and the dot size is controlled by the amount of Ge growth. Using this method, we successfully form a Ge dot array using an array of small pyramids as an anchor by Ge growth at a growth temperature of 700°C and a postannealing process for migration at a substrate temperature of 700°C for 30 min. The results indicate that the proposed method with the Ge migration and Ge dot anchoring behavior with a small pyramid anchor is very useful in forming an artificially sized and positioned Ge dot array.