Abstract
In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible process. Due to the adoption of a thin AlO x /GeO x interfacial layer, the TiN/HfO x /AlO x /GeO x /Ge structured RRAM shows both excellent switching behavior and diodelike rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory was proposed and demonstrated, and its function was verified by experimental measurements. This novel two-asymmetric RRAM-based TCAM cell with only $8{F} ^{\textsf {2}}$ size is very promising for future energy and area-efficient IoT and Internet applications.
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