Gd xSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Abstract

Semiconducting gadolinium silicide Gd x Si samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick Gd x Si film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd 2O 3. All of these results indicate that an amorphous semiconductor is formed.