Abstract
Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400°C. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C–V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p–n junction is formed between FexSi film and silicon substrate showing rectifying effect.
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