Abstract
The Ga 1− x Mn x Sb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga 1− x Mn x Sb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga 1− x Mn x Sb samples indicate that the Ga 1− x Mn x Sb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga 1− x Mn x Sb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry.
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