(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition

Abstract

The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250°C showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga 5.2Mn was obtained in the sample grown at the substrate temperature of 250°C. Ga 5.2Mn, Ga 5Mn 8 and Mn 3Ga were obtained in the sample grown at the substrate temperature of 400°C. However, there is no new phase in the sample grown at the substrate temperature of 200°C. The sample grown at 400°C was annealed at 840°C. In this annealed sample Mn 3Ga disappeared, Ga 5Mn 8 tended to disappear, Ga 5.2Mn crystallized better and a new phase of Mn 2As was generated.