Abstract
A theoretical description of a single non-compensated delta -layer with an additional gate electrode is presented. For layers with varying impurity density, the energy level positions, electron concentrations and mobilities in different subbands as well as the net layer conductivity have been calculated as functions of applied depleting voltage phi 0. Changing the number of the energy levels in a quantum well and transforming the electron wavefunctions, the voltage produces a specific transconduction versus phi 0 dependence in the structure.
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