Noise contribution of the offset-gate i.g.f.e.t. with an additional gate electrode

Abstract

The 1/f noise power of the offset-gate i.g.f.e.t. with an additional gate electrode (i.g.t.) is, under certain bias conditions, considerably lower in comparison to the full-gate i.g.f.e.t. of similar dimensions. This behaviour can be explained by a field dependent 1/f noise component from the pinchoff region. The i.g.t. allows the separation of the 1/f noise from the channel region and from the pinchoff region.