Abstract
Abstract Zinc telluride (ZnTe) epitaxial layers were grown on gallium arsenide (GaAs) (211) substrate at different growth temperatures by molecular beam epitaxy (MBE). The fabricated interdigitated metal semiconductor metal (MSM) configuration-based photodetector on ZnTe epitaxial layers exhibited stable and excellent photo response in a broad spectral range (250 to 550 nm) up to 125 ℃. The room temperature and higher temperature (125 ℃) values of maximum current, spectral responsivity, and detectivity at an applied bias of 5 V and 550 nm wavelength were 3.5×10-8 A, 0.1 A/W and 1×1011 Jones and 1.7×10-6 A, 2.5 A/W and 1.5×1011 Jones, respectively. The maximum photo-to-dark-current ratio (PDCR) value at zero bias and 100 ℃ was obtained for the ZnTe layer grown at an optimum growth temperature of 380 ℃. The high PDCR value exhibits the self-powered capability of the detector. Further, the detector exhibits good On-Off switching to the illuminating light with rise and decay times less than 0.29 s and 0.4 s, respectively, at room temperature. The dependence of photo response on material quality was analysed by varying the substrate growth temperature. The broadband responsivity of the ZnTe-based photodetector shows its capability as a multicolour detector in UV and visible region with the use of suitable blocking filters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.