Abstract
A novel AlGaN/GaN-based HEMT using gate recess technology is designed and simulated by deploying both Si 3 N 4 /SiO 2 passivation layers on SiC substrate using Synopsys Tcad tools. The drain current of the proposed device is measured to be 726mA at a threshold voltage of −1.2V from the study of the DC characteristics of the device. The RF characteristics of the GaN/AlGaN HEMT is analyzed by the AC analysis of the proposed device using a two port network. The transconductance of the device obtained by the AC analysis is found to be 178mS/mm at a gate voltage, V gs of −0.4V. The current gain cut off frequency (ft) of the AlGaN/GaN HEMT is found to be 70GHz at a gate voltage of −0.4V. The power gain cut off frequency of the device is found to be 200GHz from the small signal AC analysis of the device. Hence, the gate-recessed AlGaN/GaN based HEMT is found to be a suitable device for high frequency applications.
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