Abstract
To achieve high performance in HEMT devices such as high power gain cut off frequency and high current gain cut off frequency and to get maximum drain current and transconductance. By using lattice matched quaternary barrier such as In AlGaN and re-growing the ohmic contacts in HEMT device. To reach high fmax we have to combine a low gate recess technology, scaled device geometry and recessed source and drain omhic contact to simultaneously enable minimum short channel effect. Short channel effect will lead to current leakage in the device. This effect can be suppressed with the help of barrier and back barrier.
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