Abstract
Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS=0.5V and ID=100mA/mm, and gate leakage to 1×10−3mA/mm from 4 at VGS=−1.2V and VDS=0.8V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.
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