Abstract
Gate leakage current is becoming an important component of total leakage current in scaled metal oxide semiconductor field effect transistor (MOSFET) devices. The gate leakage current is mostly predicted by drift diffusion (DD) based simulators which do not accurately model non-linear effects such as velocity overshoot and non-equilibrium hot carrier transport in very short gate length transistors. We present a full-band Monte Carlo (MC) model that has been coupled to a Schrodinger equation solver to predict direct tunneling gate currents in a 50 nm gate length (31 nm channel length) n-type MOSFET in saturation mode, in logic on-state and logic off-state. In addition a dual-thickness gate oxide structure is proposed to reduce the gate tunneling leakage current.
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