Laser synthesized silicon carbide power semiconductor devices

Abstract

A KrF Excimer laser is used to synthesize a silicon carbide equivalent prototype metal oxide semiconductor field effect transistor (MOSFET) device. The structure is near-monolithic in that metal like conductors and semiconductors are directly laser synthesized on and through an insulating silicon carbide film deposited on a silicon carbide semiconductor bulk substrate. Metal-like interconnect and via conductor material phases exhibit resistivities from 10−2 Ω-cm to 10−4 Ω-cm. The conductor is also solderable with conventional 60 wt %Sn-40 wt %Pb electronic solder that enables external interconnection. Laser synthesized SiC thin films exhibiting resisitivities greater than 10−2 Ω-cm show a negative coefficient of resistivity indicative of semiconductive phase behavior. Selective conductor or semiconductor transformations are controlled by laser shot number to achieve energy densities ranging from 2 to 22 J/cm2. This paper discusses the design; fabrication and characterization of this laser synthesized silicon carbide device.A KrF Excimer laser is used to synthesize a silicon carbide equivalent prototype metal oxide semiconductor field effect transistor (MOSFET) device. The structure is near-monolithic in that metal like conductors and semiconductors are directly laser synthesized on and through an insulating silicon carbide film deposited on a silicon carbide semiconductor bulk substrate. Metal-like interconnect and via conductor material phases exhibit resistivities from 10−2 Ω-cm to 10−4 Ω-cm. The conductor is also solderable with conventional 60 wt %Sn-40 wt %Pb electronic solder that enables external interconnection. Laser synthesized SiC thin films exhibiting resisitivities greater than 10−2 Ω-cm show a negative coefficient of resistivity indicative of semiconductive phase behavior. Selective conductor or semiconductor transformations are controlled by laser shot number to achieve energy densities ranging from 2 to 22 J/cm2. This paper discusses the design; fabrication and characterization of this laser synthesized sili...