Abstract
In this work, gate-first technology was developed in an AlGaN/GaN high-electron-mobility transistor (HEMT) based on a high-quality in situ SiNx gate dielectric, targeting for high-stability power applications. The effect of the high-temperature annealing process on the Ni/SiNx gate stack was systematically investigated. Almost the same basic electrical performances were observed from gate-first and gate-last processed devices. Furthermore, the annealing-like effect on the gate-stack-located trap states was revealed in gate-first devices with obvious enhancement in threshold voltage stability, validating the high compatibility of the in situ SiNx technology with the gate-first GaN HEMT technology.
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