Gate controlled bulk-barrier mechanism in an MOS power transistor

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A double-gate thin base MOS structure with a lightly doped drain is characterised and shown to have potential for low on-resistance designs. The drain current is controlled by a novel gate-controlled barrier mechanism in the base, such that beyond threshold the whole base becomes strongly inverted. This `bulk? inversion gives rise to a `wide? channel which will have a much lower resistance than the corresponding conventional surface inversion layer. A simple pseudo-one-dimensional analysis of the I/V characteristics is developed and is validated by a full two-dimensional solution of the semiconductor transport equations.