Abstract
Gate-metal-related kink effects in InAlAs ∕ InGaAs ∕ GaAs metamorphic high-electron-mobility transistors have been investigated. Improvements on the kink effect have been observed by using the higher Schottky barrier height gate alloys, including Ti∕Au, Ni∕Au, and Pt∕Au, as compared to the use of the conventional Au gate metal. In comparison with gate alloy combinations, the devices with Ti∕Au alloy exhibit superior noise characteristics, whereas those with Ni∕Au alloy demonstrate the highest power characteristics. With the gate dimensions of 1.2×200μm2, the device minimum noise figure, NFmin, is 1.17dB at 2.4GHz by using Ti∕Au and the output power is 13.14dBm at 2.4GHz by using Ni∕Au. Significant rf characteristics have also been improved upon that with Au gate.
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