Abstract
This work comprehensively investigates device characteristics of a δ-doped metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including , , , and Au. The impact-ionization-related kink effects on the device performances are found to be significantly improved by depositing the high-barrier-height gate alloys. As compared to conventional Au-gated metamorphic HEMTs, the devices with , , and gate alloys have shown superior low-noise, high-power, and high-linearity gain performances, respectively.
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