Abstract
A gate all around with back-gate (GAAB) structure was proposed for 3D NAND Flash memory technology. We demonstrated the excellent characteristics of the GAAB NAND structure, especially in the self-boosting operation. Channel potential of GAAB shows a gradual slope compared with a conventional GAA NAND structure, which leads to excellent reliability characteristics in program disturbance, pass disturbance and oxide break down issue. As a result, the GAAB structure is expected to be appropriate for a high stacking structure of future memory structure.
Highlights
In the memory market, 3D NAND flash memory is a mainstream technology that can achieve high bit density by increasing the mold stacking height [1]
ground select line (GSL) transistors are not included in the GAAB structure
A gate all around with back-gate (GAAB) structure was proposed for 3D NAND flash memory technology
Summary
3D NAND flash memory is a mainstream technology that can achieve high bit density by increasing the mold stacking height [1]. The number of cells suffering from pass disturbance increases as the string length increases [9] In this situation, most industries try to achieve periphery under circuit architecture to reduce the chip area [3,4]. As the distance between adjacent cells decreases, high electric field generated in the spacer has a significant impact on the reliability. To solve these issues, we proposed a gate all around with back-gate (GAAB) NAND structure, and attempted to prove excellent reliability compared to the conventional GAA structure using a TCAD simulation
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