Abstract

With ultra-high storage density, low bit cost and better performance, vertical three-dimensional (3D) NAND flash memory turns to be the main storage stream in the market. However, in the viewpoint of reliability, 3D NAND flash memory are quite different from traditional its 2D counterpart considering the special structures and integration processes in 3D NAND. In this work, several fundamental reliability problems in 3D NAND memory cells are addressed, including the polycrystalline Si channel, carrier tunneling layer and the silicon nitride charge storage layer.

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