Abstract
Abstract The study aimed to determine the gas response of unsensitized, Pd-sensitized, Mn-sensitized ZnO thin films to ammonia and methane gas. The films are successfully fabricated using Successive Ionic Layer Adsorption Reaction (SILAR) method. One of the films is left unsensitized and the other two were sensitized with 0.01M of Pd and Mn via dipping technique. Each film was exposed to ammonia (NH3) and methane (CH4) with concentrations of 667pm, 1333ppm and 2000 ppm. The sensitivity of the unsensitized film to methane gas was 2.46 10 , 000 p p m while its sensitivity to ammonia gas was 0.49 10 , 000 p p m . Results show that the unsensitized film was more sensitive to methane compared to ammonia gas
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