GaN quantum dots grown on non‐polar a‐plane SiC by plasma‐assisted molecular beam epitaxy

Abstract

We report on the growth of GaN quantum dots on AlN grown on (11-20) 6H-SiC. It is shown that the Stranski-Krastanow growth mode of GaN on this surface results in the formation of GaN quantum dots aligned along [1-100]. Their morphology and optical properties were studied as a function of GaN coverage. The cathodoluminescence of the dots was observed above the GaN gap energy, as an indication that the electric field is greatly reduced in these non-polar heterostructures. The persistence of photoluminescence intensity as a function of temperature was observed, as a signature of carrier localization inside the quantum dots.