Abstract

This paper reports the performance of GaN -based building blocks for monolithic integration. An integrated gate driver, low-voltage analog and synchronous digital circuits are fabricated in a 650-V GaN-on-Si process and measured. Calibrated GaN models are compared against simulated silicon designs to identify optimal integration criteria.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call