GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus,Malek Zegaoui,Farid Medjdoub

doi:10.7567/apex.11.034102

Abstract

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Highlights

To cite this version: Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
For future efficient and low-cost power electronics, GaN high-electron-mobility transistors (HEMTs) on silicon (Si) substrate are highly promising owing to their superior intrinsic properties such as large bandgap, high breakdown field strength, and high electron saturation velocity.1–9) GaN-on-Si transistors suffer from poor critical electrical field strength of the Si substrate together with a parasitic conduction at the buffer=substrate interface leading to device breakdown.10–12) the highest reported three-terminal breakdown voltage (VBD) values for GaN-on-Si HEMTs defined at an off-state leakage current of 1 μA=mm are still below 1.5 kV,13) which is basically limited by the Si substrate and the associated material quality.14–21)
SiN gate dielectric under the gate and the LSR technique combined with 15-μm-thick AlN layer enabled the state-ofthe-art GaN-based HEMTs with remarkably low off-state leakage current (

Summary

Introduction

To cite this version: Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Results

Conclusion