Abstract
GaN epitaxial layer has been grown on 2 inch diameter Si substrates by using highly conductive BP buffer crystal. It has been found that the 2-inch GaN on BP/Si wafers are remarkably flat after epitaxial process. BP layer has grown flat and continuously on a large size silicon wafer. GaN has been found to grow continuously on such a substrate.?BP crystals have been found to be highly conductive and controllable depending on the gas ratio. In addition, UV illumination enables us to study the chamber conditions such as contamination by impurity. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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