GaN-on-Si for Power Technology

Abstract

The optimization of the crystal growth of the GaN buffer, and more in general of the III-nitride epilayers, cannot be exclusively done at material level through crystalline measurements. As a matter of fact, device parameters such as current density, breakdown voltage, threshold voltage, gate capacitance, switching charges etc.. are ultimately resulting from the material properties themselves and from the design of the epilayer stack. In this manuscript we study the impact of uniform, crack-free and high-quality Gallium Nitride epilayer grown on Si substrate on device performance.