Abstract
The effect of wave function penetration into gate oxide for n-Channel Double Gate Junctionless Transistor had been studied in terms of quantum mechanically extracted gate capacitance and threshold voltage. The gate capacitance in full depletion and partial depletion mode of operation of the device remains visibly same regardless of penetration into gate insulator. Consequently, given the same device parameters like oxide material, channel thickness, oxide thickness and doping density are maintained, no effect of wave function penetration on threshold voltage is observed.
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