Abstract
In this paper, the influence of reactor pressure on the quality of GaN epilayer grown by Hydride vapor phase epitaxy (HVPE) is reported. A series of sample was fabricated at 0.2, 0.5, 0.7 and 1 atm. There were several samples at certain pressure in order to avoid the random affection. And the root mean square (RMS) is introduced to determine the repeatability. The rocking curve and photoluminescence spectrum are used to evaluate the quality of the grown epilayer. The reactor pressure has affection on the quality of GaN epilayer. Low reactor pressure is helpful to improving the quality of crystal structure.
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