Effect of Reactor Pressure on Qualities of GaN Layers Grown byHydride Vapour Phase Epitaxy

Abstract

The influence of reactor pressure on GaN layers grown by hydride vapourphase epitaxy (HVPE) is investigated. By decreasing the reactorpressure from 0.7 to 0.5 atm, the GaN layer growth mode changes fromthe island-like one to the step flow. The improvements in structuraland optical properties and surface morphology of GaN layers areobserved in the step flow growth mode. The results clearly indicatethat the reactor pressure, similarly to the growth temperature, is oneof the important parameters to influence the qualities of GaN epilayersgrown by HVPE, due to the change of growth mode.