GaN-полевой транзистор с эффективным теплоотводом на Si-подложке

Abstract

A simple design of a GaN field-effect transistor on a Si substrate with efficient heat removal through polydiamond layers formed on the walls of grounding holes is proposed. According to calculations, as a result of the introduction of such a heat sink with the same average distance between the gate sections, the maximum temperature in the channel of the GaN transistor on the Si substrate decreases significantly and becomes comparable to the maximum temperature in the channel of the GaN transistor on the SiC substrate.