Galvanic deposition of nanocrystalline ZnO thin films from aZnO–Zn(OH)2 mixed phase precursor on p-Si substrate

Abstract

A galvanic technique for the deposition of ZnO thin films is reported. The depositions werecarried out on p-type single-crystal silicon substrates at room temperature, from a solution ofZnSO4, where the Zn rod acted as a sacrificing anode and p-Si was the cathode. The deposition ofZnO by this method is pH sensitive, and a pH between 4 and 5 is found to be optimum forfilm deposition. This deposition technique is simple, inexpensive and can be carried out atroom temperature. X-ray diffraction (XRD), scanning electron microscopy (SEM) andatomic force microscopy (AFM) studies revealed the nanocrystalline structure of the films.The resistivity of the annealed ZnO films was determined by the Van der Pauwmeasurement technique.