Abstract
Using nitrogen as a carrier gas, we have grown a GaInNAs/GaAs three-quantum-well structure by metalorganic chemical vapor deposition (MOCVD). Photoluminescence (PL) intensity of the sample using nitrogen carrier gas was increased by more than one order of magnitude and full-width at half maximum (FWHM) was reduced in comparison with a sample using hydrogen carrier gas at the same PL peak wavelength. Furthermore, the incorporation ratio of nitrogen was increased by using nitrogen carrier gas.
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