Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas

Abstract

ZnTe homoepitaxial layers have been grown by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride with nitrogen carrier gas. Effects of carrier gas on the growth rate and photoluminescence (PL) properties of the ZnTe layers have been investigated. No remarkable difference was found in the growth rate of the deposited layer between hydrogen and nitrogen carrier gases at low substrate temperature up to 60 °C. However, at high substrate temperature, the growth rate obtained using nitrogen carrier gas exhibits only a slight reduction, while that using hydrogen is significantly reduced. PL spectra exhibit a sharp excitonic emission at 2.375 eV associated with shallow acceptor in the ZnTe layer grown under the condition of various VI/II ratios and substrate temperature condition by using nitrogen carrier gas, different from the case of hydrogen carrier gas.