GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition

Abstract

A 1.35 μm GaInAsP/InP double heterostructure laser has been grown on a Si substrate using low-pressure metalorganic chemical vapor deposition. This was done without the use of a superlattice layer or a very thick InP buffer layer, which are used to prevent the dislocations from spreading into the active layer. Pulsed operation with output power of over 200 mW per facet was achieved at room temperature for broad area lasers with 20 μm width and 170 μm cavity length. The threshold current density of a 350 μm cavity length device was 9.8 kA/cm2. The characteristic temperature was 66 K.