Growth of GaAs Layers on Si Substrates by One-Step Low-Pressure Metal-Organic Chemical Vapor Deposition without High-Temperature Thermal Cleaning Treatment

Abstract

The role of thermal cleaning treatment prior to deposition has been studied in one-step low-pressure metal-organic chemical vapor deposition (LP-MOCVD) of GaAs layers on Si(100) substrates. In the process without thermal cleaning, the surface morphologies of GaAs epilayers and the properties of Ti-GaAs Schottky junctions were affected seriously both by the exposure time of the Si substrates in air ambient and by the tilt angle of the substrates. The GaAs epilayers with mirror-like surfaces and good electrical properties were grown on the Si(100) substrates tilted 4° to the <011> direction, regardless of the high-temperature thermal cleaning process.